Sensors, AFC, Phase I
Advanced III-V Avalanche Photodiode Structures in the Infrared
Objective
Design and implement III-V based linear-mode infrared avalanche photodiodes suitable for ranging imagery.
Description
Active imaging systems all require the detection of reflected light, usually through an active source such as a laser. Additionally, commonly fielded single-point range finding technologies lack the capability to ensure that the range for the object of interest is being interrogated rather than an adjacent object in the scene.
In this effort, we seek to develop III-V linear mode avalanche photodiodes which are capable of linear gain and short response times to enable detection and ranging of man-sized objects. Approaches compatible with leveraging large substrates and existing mature commercial foundry services are highly preferred.
Phase I
Design and model III-V APD detector structures compatible with GaSb or GaAs substrates and capable of linear gains with short response times in the infrared. Determine growth process that includes any experimental parametric variations for fabrication.
Proposers intending to grow initial test structures and perform preliminary characterization in Phase I will be rated favorably. Develop experimental plan for achieving anticipate Phase II program goals.
Phase II
Execute growth, characterization, and fabrication plans developed during the Phase I program. Deliver growth recipe to commercial growth foundry and determine efficacy of growth via wafer level characterization as necessary.
Fabricate test chips or large area devices suitable for cryogenic testing and measure sensor dark current, spectral characteristics, and quantum efficiency. Characterize gain of device as function of applied bias and show gain-normalized dark current levels. Characterize minimum detectable pulse energy using test structures or mini arrays. By the conclusion of the Phase II program, deliver a test report and test structures to the Army for characterization of pulse detection.
Phase III
Continue to mature the technologies developed in Phase II for potential dual-use applications that require ranging. Continue incremental improvement of detector structures and increase array format to sizes suitable for imaging. Investigate options for ROIC integration.
Submission Information
Submit in accordance with DoD SBIR BAA 23.2
References:
- Tan, Chee Leong, and Hooman Mohseni. “Emerging technologies for high performance infrared detectors.” Nanophotonics 7.1 (2018): 169-197.
- Shrestha, Ajay, and Ausif Mahmood. “Review of deep learning algorithms and architectures.” IEEE access 7 (2019): 53040-53065.
- Gach, Jean-Luc. “Photon counting in the infrared with e-APD devices.” High Energy, Optical, and Infrared Detectors for Astronomy VIII. Vol. 10709. SPIE, 2018.
Objective
Design and implement III-V based linear-mode infrared avalanche photodiodes suitable for ranging imagery.
Description
Active imaging systems all require the detection of reflected light, usually through an active source such as a laser. Additionally, commonly fielded single-point range finding technologies lack the capability to ensure that the range for the object of interest is being interrogated rather than an adjacent object in the scene.
In this effort, we seek to develop III-V linear mode avalanche photodiodes which are capable of linear gain and short response times to enable detection and ranging of man-sized objects. Approaches compatible with leveraging large substrates and existing mature commercial foundry services are highly preferred.
Phase I
Design and model III-V APD detector structures compatible with GaSb or GaAs substrates and capable of linear gains with short response times in the infrared. Determine growth process that includes any experimental parametric variations for fabrication.
Proposers intending to grow initial test structures and perform preliminary characterization in Phase I will be rated favorably. Develop experimental plan for achieving anticipate Phase II program goals.
Phase II
Execute growth, characterization, and fabrication plans developed during the Phase I program. Deliver growth recipe to commercial growth foundry and determine efficacy of growth via wafer level characterization as necessary.
Fabricate test chips or large area devices suitable for cryogenic testing and measure sensor dark current, spectral characteristics, and quantum efficiency. Characterize gain of device as function of applied bias and show gain-normalized dark current levels. Characterize minimum detectable pulse energy using test structures or mini arrays. By the conclusion of the Phase II program, deliver a test report and test structures to the Army for characterization of pulse detection.
Phase III
Continue to mature the technologies developed in Phase II for potential dual-use applications that require ranging. Continue incremental improvement of detector structures and increase array format to sizes suitable for imaging. Investigate options for ROIC integration.
Submission Information
Submit in accordance with DoD SBIR BAA 23.2
References:
- Tan, Chee Leong, and Hooman Mohseni. “Emerging technologies for high performance infrared detectors.” Nanophotonics 7.1 (2018): 169-197.
- Shrestha, Ajay, and Ausif Mahmood. “Review of deep learning algorithms and architectures.” IEEE access 7 (2019): 53040-53065.
- Gach, Jean-Luc. “Photon counting in the infrared with e-APD devices.” High Energy, Optical, and Infrared Detectors for Astronomy VIII. Vol. 10709. SPIE, 2018.